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| WTE POWER SEMICONDUCTORS EFS1J Pb 1.0A LOW VF SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE Features ! ! ! ! ! ! ! Glass Passivated Die Construction Ideally Suited for Automatic Assembly B Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Low Power Loss A Super-Fast Recovery Time F Plastic Case Material has UL Flammability Classification Rating 94V-O C H G E SMA/DO-214AC Dim Min Max 2.50 2.90 A 4.00 4.60 B 1.20 1.60 C 0.152 0.305 D 4.80 5.28 E 2.00 2.44 F 0.051 0.203 G 0.76 1.52 H All Dimensions in mm D Mechanical Data ! ! ! ! ! ! Case: SMA/DO-214AC, Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.064 grams (approx.) Lead Free: For RoHS / Lead Free Version, Add "-LF" Suffix to Part Number, See Page 4 Maximum Ratings and Electrical Characteristics Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TL = 75C Symbol VRRM VRWM VR VR(RMS) IO @TA=25C unless otherwise specified EFS1J Unit 600 420 1.0 V V A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range @IF = 1.0A @TA = 25C @TA = 100C IFSM VFM IRM trr Cj RJL Tj, TSTG 30 1.25 5.0 100 50 8 35 -65 to +150 A V A nS pF C/W C Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm2 land area. EFS1J 1 of 4 (c) 2006 Won-Top Electronics I(AV), AVERAGE FWD RECTIFIED CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 1.00 10 Tj = 25C Pulse width = 300s 0.75 1.0 0.50 0.1 0.25 Single phase half wave Resistive or Inductive load 0 0 25 50 75 100 125 150 175 TL , LEAD TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics IFSM, PEAK FORWARD SURGE CURRENT (A) 30 Pulse width 8.3 ms single half-sine-wave (JEDEC method) 100 Tj = 25C f = 1.0MHz 20 Cj, CAPACITANCE (pF) 10 10 0 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Peak Forward Surge Current 100 1 1 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance trr +0.5A 50 NI (Non-inductive) 10 NI 100 Device Under Test (-) Pulse Generator (Note 2) 0A (+) 50V DC Approx -0.25A (-) 1.0 NI Oscilloscope (Note 1) (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0M, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50. -1.0A Set time base for 5/10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit EFS1J 2 of 4 (c) 2006 Won-Top Electronics MARKING INFORMATION RECOMMENDED FOOTPRINT WTE EFS1J Cathode WTE EFS1J = Polarity Band = Manufacturer's Logo = Device Number 0.050 MIN (1.27 MIN) 0.058 MIN (1.47 MIN) 0.083 MAX (2.11 MAX) inches(mm) PACKAGING INFORMATION TAPE & REEL Direction of Unreeling 4mm 330mm 12mm 4mm 12mm Product ID Label 1.6mm Reel Diameter (mm) 330 Quantity (PCS) 7,500 Inner Box Size L x W x H (mm) 340 x 337 x 45 Quantity (PCS) 15,000 Carton Size L x W x H (mm) 370 x 370 x 420 Quantity (PCS) 120,000 Approx. Gross Weight (KG) 17.5 Note: 1. Paper reel, white or gray color. 2. Components are packed in accordance with EIA standard 481-1 and 481-2. EFS1J 3 of 4 (c) 2006 Won-Top Electronics ORDERING INFORMATION Product No. EFS1J-T3 1. 2. Package Type SMA Shipping Quantity 7500/Tape & Reel Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. To order RoHS / Lead Free version (with Lead Free finish), add "-LF" suffix to part number above. For example, EFS1J-T3-LF. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life support devices or systems without the express written approval. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com We power your everyday. EFS1J 4 of 4 (c) 2006 Won-Top Electronics |
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